Zero-indium laser hits UV record
By growing AlGaN sideways from angled seed crystals, Hamamatsu Photonics has cut non-radiative recombination while providing a suitable bandgap for UV lasing.
Japanese researchers have exploited their high-quality GaN growth technique to produce the first UV laser diode without indium in its active layer. Using this approach, the team from Hamamatsu Photonics produced the shortest wavelength electrically pumped laser ever (Nature Photonics, doi:10.1038/nphoton.2008.135).
The team reduced the wavelength of light its lasers emit under pulsed operation from its previous best of 355 nm to 342 nm – but is mainly pleased with the device design.